| PART |
Description |
Maker |
| STK405-050 STK405-120 STK405-010 STK405-030 STK405 |
2ch AF Power Amplifier (Split Power Supply) 30W 30W min, THD =10%
|
SANYO[Sanyo Semicon Device]
|
| MGFS45V2123 S452123 |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| D45C11 D45C2 D45C8 D44C5 D44C8 D45C5 D44C11 D44C1 |
POWER TRANSISTORS(4A,30-80V,30W) 功率晶体管（4A30 - 80V的，功率30W
OSC 5V 8PIN CMOS PROGRAM
POWER TRANSISTORS(4A/30-80V/30W)
TRANSISTOR|BJT|PNP|80VV(BR)CEO|4AI(C)|TO-220AB
POWER TRANSISTORS(4A30-80V30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| D1203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应30W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| MGFC45B3436B |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| IRIS4007K IRIS4007 IR4007 IRIS40X IRISMPS1 |
INTEGRATED SWITCHER 多功能开
DC-DC flyback power supply, IRIS4007(K), 48VIN, 5VOUT, 5A IOUT
30W Output DC-DC Integrated Switchers in a TO-262 (5-Lead) package
30W Output DC-DC Integrated Switchers in a TO-220 (5-Leads) package
|
International Rectifier, Corp.
IRF[International Rectifier]
http://
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
